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Shenzhen Fuchao Technology
| Model： | UF3C065080T3S |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | UnitedSiC (Qorvo) |
| Description： | MOSFET N-CH 650 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$5.2600
$5.2600
50
$4.2000
$210.0000
100
$3.8900
$389.0000
| TYPE | DESCRIPTION |
| Mfr | UnitedSiC (Qorvo) |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
